SBN file implementing Schichman-Hodges MOSFETs model.
string is used to select among models. Possible models are:
- string = NMOS (Simplified Shichman-Hodges n-MOSFET)
- string = PMOS (Simplified Shichman-Hodges p-MOSFET)
Parameters for all the above models are:
- rd -> parasitic resistance between drain and source
- W -> MOSFET width
- L -> channel length
- mu0 -> reference value for mobility
- Vth -> threshold voltage
- Cox -> oxide capacitance
- Cgs -> gate-source capacitance
- Cgd -> gate-drain capacitance
- Cgb -> gate-bulk capacitance
- Csb -> source-bulk capacitance
- Cdb -> drain-bulk capacitance
- Tshift -> shift for reference temperature on MOSFETs
See the IFF file format specifications for details about
the output structures.
See also: prs_iff,asm_initialize_system,asm_build_system.