material properties for silicon and silicon dioxide
esir = relative electric permittivity of silicon
esio2r = relative electric permittivity of silicon dioxide
esi = electric permittivity of silicon
esio2 = electric permittivity of silicon dioxide
mn = effective mass of electrons in silicon
mh = effective mass of holes in silicon
u0n = low field electron mobility
u0p = low field hole mobility
uminn = parameter for doping-dependent electron mobility
betan = idem
Nrefn = idem
uminp = parameter for doping-dependent hole mobility
betap = idem
Nrefp = idem
vsatn = electron saturation velocity
vsatp = hole saturation velocity
tp = electron lifetime
tn = hole lifetime
Cn = electron Auger coefficient
Cp = hole Auger coefficient
an = impact ionization rate for electrons
ap = impact ionization rate for holes
Ecritn = critical field for impact ionization of electrons
Ecritp = critical field for impact ionization of holes
Nc = effective density of states in the conduction band
Nv = effective density of states in the valence band
Egap = bandgap in silicon
EgapSio2 = bandgap in silicon dioxide
ni = intrinsic carrier density
Phims = metal to semiconductor potential barrier
Package: secs1d
